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April 2013
FQP47P06
P-Channel QFET ? MOSFET
- 60 V, - 47 A, 26 m?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconducto ? ’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched
mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
Features
- 47 A, - 60 V, R DS(on) = 26 m ? @ V GS = - 10 V ,
I D = - 23.5 A
? Low Gate Charge (Typ. 84 nC)
? Low Crss ( yp. 320 pF)
? 100% Avalanche Tested
? 175°C Maximum Junction Temrature Rating.
S
!
G !
●
●
? ▲
G
D S
TO-220
●
!
D
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP47P06
-60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-47
-33.2
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-188
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
820
-47
16
-7.0
160
1.06
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +175
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ CS
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Case-to-Sink , Typ.
Thermal Resistance, Junction-to-Ambient , Max.
FQP47P06
0.94
0.5
62.5
Unit
°C / W
°C / W
°C / W
?2001 Fairchild Semiconductor Corporation
FQP47P06 Rev. C0
www.fairchildsemi.com
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